jeiieu , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC2516 description ? low collector saturation voltage applications ? designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,dc/dc converters, and high frequency power amplifiers. absolute maximum ratings(ta=25-c) symbol vcbo vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation @ ta=25t: total power dissipation @ tc=25'c junction temperature storage temperature range value 80 60 12 5 10 2.5 1.5 30 150 -55-150 unit v v v a a a w ?c "c pin 1 base 2. collector 3. emitter to-220c package , t **q u i 1 ' a y i * h i k t i c "i -. e - \: - 1 l- h c dim a b r d f g h .? k l q r s u v ,4, ry ft*"l v -h m men 15.50 9.90 4.20 0.70 3.40 4.98 2,68 0.44 13.00 1.20 2.70 2.30 1.29 6.45 8.66 ?? m max 15.90 10.20 4. 50 0.90 3.70 5.18 2.90 0.60 13.40 1.43 2.90 2.70 1.35 6.65 8.86 *-s ?}* j rh n.i semi-coi]ductors reserves the right lo change test conditions, paramotcr limits and package dimensions \\ithout noiico. information furnished hy n.i scmi-fondiictors is helieved lo he both accurate and reliahle at the time ofgoing lo press. i louever. \.l somi-condnctors assumes no responsibility for anv errors or omissions discovered iu its use." n'.l semi-cuiidnctoi-s enanirages cnslomers lo \crify that dntasheels are current before placing orders. quality semi-conductors
silicon npn power transistor 2SC2516 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat) vse(sat) icbo icer icex iebo hpe-1 hpe-2 parameter collector-emitter sustaining voltage ? collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain conditions lc= 50ma; ib= 0 lc= 3.0a; ib= 0.3a lc= 3.0a; ib= 0.3a vcb= 60v; ie= 0 vce= 60v; rbe= 51 n , ta=125 c vce= 60v; vbe(off)= -1.5v vce= 60v; vbe(0ff)= -1 -5v, ta=125"c veb= 5v; lc=0 lc= 0.3a; vce= 5v lc= 3.0a; vce= 5v min 60 40 40 max 0.6 1.5 10 1.0 10 1.0 10 200 unit v v v u a ma u a ma u a switching times ton utg tf turn-on time storage time fall time lc=3.0a,rl=17n, !bi= -lb2= 0.3a,vcc~ 50v 0.5 3.0 0.5 u s u s u s hpe-2 classifications m 40-80 l 60-120 k 100-200
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